通過條件
成 績 :60 分
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Ch1 Resistivity.pdf
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Ch2 Carrier and Doping Density.pdf
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Ch3-1 Contact Resistance and Schottky Barriers.pdf
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Ch3-2 Contact Resistance and Schottky Barriers.pdf
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Ch4 Series Resistance, Channel Length and Width, and Threshold Voltage.pdf
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Ch5 Defects.pdf
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Ch6 OXIDE AND INTERFACE TRAPPED CHARGES, OXIDE THICKNESS.pdf
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Ch7-1 Mobility.pdf
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Ch7-2 Mobility.pdf
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